Researchers based in China have reported 34% enhanced external quantum efficiency (EQE) of a 5μm gallium nitride (GaN) blue light-emitting diode (LED) from a neutral reactive nitrogen/hydrogen (N/H) treatment [Kai Li et al, Appl. Phys. Lett., v129, p032103, 2026]. The team from University of Science and Technology of China, Suzhou Institute of Nano-tech and Nano-bionics, and Jiangsu Institute of Advanced Semiconductors, reports: “Treatment of neutral reactive N/H species effectively mitigates the surface Fermi-level pinning and reduces the defect…